Engineering Essay: Analysis of Low-Noise Amplifier

Analysis of Low-Noise Amplifier
Jipeng Liu
Rensselaer Polytechnic Institute
ECSE Department
Troy, NY, 12180
[email protected]
Abstract
Low-noise amplifiers (LNAs) are some of the simplest yet the most essential devices in the field of engineering. In its most basic sense, an LNA is an electronic device that boosts a lower-power signal to a sufficient level without creating significant disruption in the circuit's signal-to-noise ratio. In this study, the author tried to create an LNA design through various techniques and optimization. Specifically, the researcher focused on several ways to achieve the goals of creating an LNA, such as the Multi-band OFDM modulation, polarity modulation or short pulses transmission, and other types of techniques that have been utilized in various studies. Accordingly, the study proceeds with the creation of the circuit design and the analysis of various aspects related to it, such as the use of complementary metal-oxide–semiconductors (CMOS), designing of bias circuits, creation of linear dynamic indicators, and the balancing of power consumption and functional stability. By the end of the study, the author has found out that despite the effectiveness of the use of inductive source degeneration, the inevitable performance loss suggests the need for further research in better materials and the improvement of the input matching network layout.
Keywords: Low Noise Amplifier, CMOS, Linear Dynamic Indicators, MM-Wave Circuits
1 Introduction
LNA is also called a low noise amplifier. Remote communication systems have a very significant part, which is known as a low noise amplifier. The execution of the reception of the complete system is conditioned by the LNA, which is the receiver's main phase. To fulfill various restrictions in the design of radio frequency, it is not easy to acquire complete specifications. Depending on the primary specification, two specific methods, including low noise figure search and the high value of gain, are used to design an LNA. Nonetheless, designing a high-frequency MOS configuration could be tedious, which means that it requires a careful approach on the specifications of the circuit. This usually leads to an iterative cycle that is helped by software tools in order to fulfill the design specifications.
Therefore, the dispersing parameters, also known as S-parameters, are the most emblematic methodology in portraying these circuits. Other than currents and voltages, simply power signal contemplations are evaluated and calculated in the process. What is more, in coordinating with the circuit, these parameters or variables mirror the input/output and gain the power. That is because no model is available there, which relates or links physical qualities of the semiconductor (transistor) and the S-parameters that show the main variables to encounter LNA design limitations. It is a well-known fact that remote communication systems with high speed have been developing for the past five years [1]. To solve the problem of high data rate, remote interchanges with a frequency range from 3.1 to 10.6 GHz, and short separation as well as ultra-wideband are rising. To execute a UWB framework, two robust methodologies have been proposed. The two methodologies ...